RECENZE: ADATA LEGEND 840 1TB PCIe NVMe Gen4 SSD - aneb Innogrit bez DRAM cache
Kapitoly článků
Tradičně používám AS SSD Benchmark, který umí slušně potrápit všechna SSD, testuji pouze s 10GB bloky.
ADATA LEGEND 840 1TB si v AS SSD benchmarku vede relativně slušně vzhledem k tomu, že nemá DRAM cache. Překvapil mně hlavně velmi dobrý výkon v testu zápisu.
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
rychlost zápisu
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
rychlost zápisu
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
rychlost zápisu
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
latence zápisu
Mimo standardního testu přidávám i zabudovaný Copy Benchmark, který simuluje kopírování ISO souboru, instalaci programu a herních dat. V této sadě testů jsou opět výsledky opět lehce podivníé, ADATA LEGEND 840 1TB podává nejlepší výkon v prvním testu, v ostatních ale značně propadá. Benchmark jsem zkusil několikrát, ale výkon byl velmi podobný.
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
AJA System Test, jedná se o podobný testovací nástroj výkonu úložiště jako Blackmagic Disk Test. Nicméně AJA umožňuje konfigurovat velikost testovaných dat a zvolený video kodek.
10bit YUV a velikost souboru nastavuji na maximální možnou velikost, tedy 64GB. Na částečně zaplněných SSD je vysoká šance, že se značně zmenší SLC cache, pokud je k dispozici. Výsledky uvádím v MB/s, jedná se o zápis testovacího video souboru a jeho následné čtení. AJA System Test ukazuje i výkon ve formě FPS, tedy s jakou snímkovou frekvencí zvládá SSD testovací data zapisovat a číst. Poslední zajímavá informace je malý graf, který lze zvětšit. Ten ukazuje průběh zápisu testovacího souboru, červená čára ukazuje reálnou rychlost testovaného SSD.
V AJA benchmarku dopadá ADATA LEGEND 840 1TB relativně slušně, na Samsung 980 PRO nemám ale na SSD bez DRAM cache si vede překvapivě dobře a s celkem slušnou rychlostí zápisu.
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
Testuji i to, jak se zahřeje řadič SSD a jeho NAND paměti, aktuálně se spoléhám na senzory co má samotné SSD, takže výsledky berte s jistou dávkou soli. U některých SSD nemusí být navíc jasné, zda zobrazují teplotu řadiče nebo NAND. Některá SSD mají pouze jeden senzor, který by měl odpovídat teplotě řadiče. Testuji tak, že nechávám běžet benchmark dokolečka po dobu třiceti minut, zapíše se tedy 64GB dat, data se přečtou, smažou a zapíšou znovu.
Na testovaném ADATA LEGEND 840 1TB SSD jsem měl nalepený chladič od výrobce a navíc bylo SSD ofukováno ventilátorem čipsetu. Teplota v zátěži je tak relativně nízká a nedocházelo ke zpomalování bez přehřívání. Nicméně pokud toto SSD budete provozovat bez přiloženého chladiče na nějaké desce, která nemá navíc vlastní chlazení pro M.2 SSD, počítejte s throttlingem v nějaké větší zátěži.
SMI T1KV37.00, 512MB LPDDR3-1866, 3D TLC NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung MEX, 512MB LPDDR2, Samsung 32-layer MLC
2,5“ 7mm SATA 6Gb/s
Samsung MGX, 512MB, Samsung 32-layer TLC
2,5“ 7mm SATA 6Gb/s
AMD X570 SW RAID, 512MB, Samsung 32-layer TLC
4x 2,5“ 7mm SATA 6Gb/s
Realtek RTS5762, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-00705-A2, 512MB DDR3-1866, SanDisk 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
SanDisk 20-82-007011, 512MB DDR4-2400, 64-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Realtek RTS5762, 64MB DDR3, Micron 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E18, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 1GB DDR4-2667, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Silicon Motion SM2267, 512MB DDR4, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5220, 3D TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
SK hynix ACNT038, 512MB LPDDR4-4266, SKhynix 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Silicon Motion SM2267, 256MB DDR3L-1866, TLC NAND
M.2 2280 PCIe NVMe Gen4 x4
Innogrit IG5236, 1GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E18, 2GB DDR4-2667, Micron 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen4 x4
Phison E16, 2GB DDR4-2667, Micron 96-layer QLC
M.2 2280 PCIe NVMe Gen4 x4
Samsung Elpis, 1GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 512MB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Elpis, 2GB LPDDR4-1866, Samsung 136-layer NAND
M.2 2280 PCIe NVMe Gen4 x4
Samsung Phoenix, 1GB LPDDR4-1866, Samsung 96-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 512MB LPDDR4, Samsung 64-layer 3D MLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Phoenix, 2GB LPDDR4, Samsung 64-layer 3D TLC
M.2 2280 PCIe NVMe Gen3 x4
SK hynix YCN34PTA0, 512MB LPDDR4, TLC
M.2 2280 PCIe NVMe Gen3 x4
Samsung Pablo, Samsung 128-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
Phison E16, 512MB DDR4-2667, Toshiba 96-layer TLC
M.2 2280 PCIe NVMe Gen4 x4
Micron DMO1B2, 1GB LPDDR4-4266, Micron 96-layer NAND
M.2 2280 PCIe NVMe Gen3 x4
Samsung Polaris, 512MB LPDDR3, Samsung 48-layer TLC
M.2 2280 PCIe NVMe Gen3 x4
NAND